Intelekelelo ye-BOM yezixhobo ze-Electronic Umqhubi IC Chip IR2103STRPBF

Iimpawu zeMveliso

Amaxwebhu & nemidiya

Ulwahlulo lokusiNgqongileyo nokuThunyela ngaphandle

Abaqhubi beSango

Umqhubi wesango sisikhulisi samandla esamkela igalelo lamandla aphantsi ukusuka kumlawuli we-IC kwaye uvelise igalelo lokuqhuba ngokuphezulu kwisango le-transistor yamandla aphezulu njenge-IGBT okanye i-MOSFET yamandla.Abaqhubi besango banokubonelelwa nokuba yi-chip okanye njengemodyuli ecacileyo.Ngokwenene, umqhubi wesango uqukethe i-level shifter ngokudibanisa ne-amplifier.Umqhubi wesango IC usebenza njengojongano phakathi kweempawu zolawulo (idijithali okanye abalawuli be-analog) kunye nokutshintsha kwamandla (IGBTs, MOSFETs, SiC MOSFETs, kunye neGaN HEMTs).Isisombululo esihlanganisiweyo somqhubi wesango sinciphisa ubunzima boyilo, ixesha lokuphuhlisa, i-bill of materials (BOM), kunye nesithuba sebhodi ngelixa siphucula ukuthembeka phezu kwezisombululo zesango-ezenziwe ngokufihlakeleyo.

Imbali

Ngo-1989, i-International Rectifier (IR) yazisa imveliso yokuqala yomqhubi wesango le-HVIC ye-monolithic, i-high-voltage ehlanganisiweyo yesekethe (HVIC) iteknoloji isebenzisa i-patent kunye ne-proprietary monolithic izakhiwo ezidibanisa i-bipolar, i-CMOS, kunye nezixhobo ze-DMOS ezisecaleni kunye ne-voltage yokuphazamiseka ngaphezu kwe-700 V kunye ne-1400. I-V yokusebenza kwamandla ombane we-600 V kunye ne-1200 V. [2]

Ukusebenzisa le teknoloji ye-HVIC edibeneyo, zombini i-high-voltage level-shifting circuits kunye ne-low-voltage analog kunye neesekethe zedijithali zinokusetyenziswa.Ngokukwazi ukubeka i-high-voltage circuitry ('kwiqula' elenziwe ngamakhonkco e-polysilicon), 'inokwazi ukudada' i-600 V okanye i-1200 V, kwisilicon enye kude ne-low-voltage circuitry, high-side. amandla MOSFETs okanye IGBTs zikhona ezininzi ezithandwayo off-line zesekethe topologies ezifana buck, synchronous boost, half-bridge, full-bridge kunye nesigaba sesithathu.Abaqhubi besango le-HVIC abanokutshintsha okudadayo bafaneleke kakuhle kwi-topology efuna icala eliphezulu, i-half-bridge, kunye noqwalaselo lwesigaba esithathu.

Injongo

Okuchasene nei-bipolar transistors, ii-MOSFET azifuni kufakwa umbane rhoqo, ukuba nje zingacinywanga okanye zingacinywa.Isango elilodwa le-electrode ye-MOSFET zenza acapacitor(icapacitor yesango), ekufuneka ihlawulwe okanye ikhutshwe ngalo lonke ixesha i-MOSFET ivulwa okanye icinyiwe.Njengoko i-transistor idinga i-voltage ethile yesango ukwenzela ukuba itshintshe, i-capacitor yesango kufuneka ihlawulwe ubuncinane kwi-voltage yesango efunekayo ukuze i-transistor iguqulwe.Ngokufanayo, ukucima i-transistor, le ntlawulo kufuneka ichithwe, oko kukuthi i-capacitor yesango kufuneka ikhutshwe.

Xa i-transistor ivuliwe okanye icinyiwe, ayitshintshi ngokukhawuleza ukusuka kwi-non-conducting ukuya kwisimo sokuqhuba;kwaye inokuxhasa okwethutyana zombini amandla ombane aphezulu kwaye iqhube umsinga ophezulu.Ngenxa yoko, xa isango langoku lisetyenziswa kwi-transistor ukubangela ukuba litshintshe, umlinganiselo othile wokushisa uveliswa, kwezinye iimeko, unokwanela ukutshabalalisa i-transistor.Ngoko ke, kuyimfuneko ukugcina ixesha lokutshintsha lifutshane kangangoko kunokwenzeka, ukuze kuncitshisweilahleko yokutshintsha[de].Amaxesha aqhelekileyo okutshintsha akuluhlu lwee-microseconds.Ixesha lokutshintsha kwe-transistor lihambelana ngokuphambene nesixa seyangokuebedla ngokubiza isango.Ke ngoko, ukutshintshela kwemisinga kuhlala kufunwa kuluhlu lwamakhulu aliqelaimilliampere, okanye kuluhlu lweiimperes.Kwiivolthi zesango eziqhelekileyo ezimalunga ne-10-15V, ezininziwattsamandla angafuneka ukuqhuba iswitshi.Xa imisinga emikhulu itshintshelwa kumaza aphezulu, umzDC-to-DC convertersokanye enkuluiinjini zombane, ii-transistors ezininzi ngamanye amaxesha zinikezelwa ngokuhambelanayo, ukwenzela ukuba unikeze ngokwaneleyo ukuguqulwa kwamandla aphezulu kunye namandla okutshintsha.

Isignali yokutshintsha i-transistor idla ngokuveliswa yi-logic circuit okanye aumlawuli omncinci, ebonelela ngomqondiso wemveliso oqhelekileyo ukhawulelwe kwii-milliamperes ezimbalwa zangoku.Ngenxa yoko, i-transistor eqhutywa ngokuthe ngqo luphawu olunjalo iya kutshintsha ngokucothayo, ngokuhambelana nelahleko ephezulu yamandla.Ngexesha lokutshintsha, i-capacitor yesango ye-transistor inokutsala i-current ngokukhawuleza kangangokuba ibangele i-overdraw yangoku kwisekethe ye-logic okanye i-microcontroller, ebangela ukushisa okugqithiseleyo okukhokelela kumonakalo osisigxina okanye ukutshatyalaliswa ngokupheleleyo kwe-chip.Ukuthintela oku kungenzeki, umqhubi wesango unikezelwa phakathi kwe-microcontroller output signal kunye ne-transistor yamandla.

Iimpompo zokushajazihlala zisetyenziswa kwiH-Bridgeskubaqhubi abaphezulu besango lokuqhuba icala eliphezulu le-n-channelamandla MOSFETskwayeIi-IGBTs.Ezi zixhobo zisetyenziswa ngenxa yokusebenza kwazo kakuhle, kodwa zifuna i-voltage yesango lokuqhuba iivolthi ezimbalwa ngaphezulu komzila kaloliwe wamandla.Xa umbindi webhulorho esisiqingatha usehla i-capacitor ihlawuliswa nge-diode, kwaye le ntlawulo isetyenziselwa ukuqhuba isango lesango le-FET elikwicala eliphezulu iivolthi ezimbalwa ngaphezulu komthombo okanye i-emitter pin's voltage ukuze uyivule.Esi sicwangciso sisebenza kakuhle ngaphandle kokuba ibhulorho iguqulwa rhoqo kwaye inqanda ukuntsonkotha kokusetyenziswa kombane okwahlukileyo kwaye ivumela izixhobo ezisebenza ngakumbi ze-n-channel ukuba zisetyenziselwe zombini iiswitshi eziphezulu nezisezantsi.