Itshiphu ye-Merrill Entsha & Yeyoqobo kwizitokhwe zombane ezihlanganisiweyo zesekethe IC IRFB4110PBF
Iimpawu zeMveliso
| UHLOBO | INKCAZO |
| Udidi | IiMveliso zeSemiconductor eziDibeneyo |
| Mfr | Infineon Technologies |
| Uthotho | HEXFET® |
| Iphakheji | Umbhobho |
| Ubume beMveliso | Iyasebenza |
| Uhlobo lweFET | N-Channel |
| Iteknoloji | I-MOSFET (i-Metal oxide) |
| Khupha ukuya kuMthombo weVoltage (Vdss) | 100 V |
| Okwangoku – Ukutsalwa kwamanzi okuqhubekayo (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Intlawulo yeSango (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Vgs (Ubukhulu) | ±20V |
| Igalelo Lobuchule (Ciss) (Max) @ Vds | 9620 pF @ 50 V |
| Inqaku leFET | - |
| Ukuchithwa kwamandla (Ubukhulu) | 370W (Tc) |
| Ubushushu bokusebenza | -55°C ~ 175°C (TJ) |
| Uhlobo lokuNqamisa | NgeHole |
| Supplier Device Package | UKUYA-220AB |
| Ipakethe / Ityala | UKUYA-220-3 |
| Inombolo yeMveliso esisiseko | IRFB4110 |
Amaxwebhu & nemidiya
| UHLOBO LWEZIBONELELO | LINK |
| Amaxwebhu edatha | IRFB4110PbF |
| Amanye Amaxwebhu Ayeleleneyo | Inkqubo yokuNombola iCandelo le-IR |
| IiModyuli zoQeqesho lweMveliso | IiSekethe eziDityanisiweyo zoMbane oPhezulu (Abaqhubi beSango le-HVIC) |
| Imveliso ekhoyo | IiRobhothi kunye neZithuthi eziKhokelwayo eziziSebenzisayo (AGV) |
| HTML Datasheet | IRFB4110PbF |
| Iimodeli ze-EDA | Umfanekiso we-IRFB4110PBF ngu-SnapEDA |
| Iimodeli zokulinganisa | Imodeli ye-IRFB4110PBF |
Ulwahlulo lokusiNgqongileyo nokuThunyela ngaphandle
| UMBALI | INKCAZO |
| Isimo seRoHS | I-ROHS3 iyahambelana |
| iNqanaba lokuSensitivity lokufuma (MSL) | 1 (Ayinasiphelo) |
| FIKELELA kwiSimo | FIKELELA Ngokungachaphazelekiyo |
| ECCN | I-EAR99 |
| HTSUS | 8541.29.0095 |
Izibonelelo ezongezelelweyo
| UMBALI | INKCAZO |
| Amanye Amagama | 64-0076PBF-ND 64-0076PBF SP001570598 |
| Ipakethe esemgangathweni | 50 |
Usapho olomeleleyo lwe-IRFET™ Amandla e-MOSFET alungiselelwe i-RDS ephantsi (kwi) kunye nekhono eliphezulu langoku.Izixhobo zilungele usetyenziso oluphantsi lwefrikhwensi efuna ukusebenza kunye nokuqina.Ipotfoliyo ebanzi ijongana noluhlu olubanzi lwezicelo ezibandakanya iimoto zeDC, iinkqubo zolawulo lwebhetri, ii-inverters, kunye neziguquli zeDC-DC.
Isishwankathelo seempawu
Ipakethe yombane esemgangathweni ngomngxuma
Ireyithingi ephezulu yangoku
Isiqinisekiso seMveliso ngokwemigangatho yeJEDEC
I-Silicon elungiselelwe usetyenziso olutshintshayo ngaphantsi kwe- <100 kHz
I-diode yomzimba ethambileyo xa kuthelekiswa nokuveliswa kwesilicon yangaphambili
Ipotifoliyo ebanzi ekhoyo
Iingenelo
I-pinout esemgangathweni ivumela ukuhla ekubuyiseleni
Ipakethe yokuthwala yangoku ephezulu
Inqanaba lemfundo esemgangathweni
Ukusebenza okuphezulu kwizicelo eziphantsi rhoqo
Ukwanda koxinzelelo lwamandla
Ibonelela abaqulunqi bhetyebhetye ekukhetheni esona sixhobo sifanelekileyo kwisicelo sabo
Para-metrics
| IiParametrics | IRFB4110 |
| Ixabiso loHlahlo-lwabiwo-mali €/1k | 1.99 |
| Isazisi (@25°C) ubuninzi | 180 A |
| Ukunyuka | THT |
| Ubushushu bokusebenza ubuncinci max | -55 °C 175 °C |
| Ptot max | 370 W |
| Iphakheji | UKUYA-220 |
| I-Polarity | N |
| QG (uchwethezo @10V) | 150 nC |
| Qgd | 43 nC |
| I-RDS (ivuliwe) (@10V) ubuninzi | 4.5 mΩ |
| RthJC max | 0.4 K/W |
| Tj max | 175 °C |
| Ubuninzi beVDS | 100 V |
| VGS(th) min max | 3 V 2 V 4 V |
| Ubuninzi beVGS | 20 V |
IiMveliso zeSemiconductor eziDibeneyo
Iimveliso ze-semiconductor ezihlukeneyo ziquka ii-transistors, i-diodes, kunye ne-thyristors, kunye nemigangatho emincinci yezo zenziwe ezimbini, ezintathu, ezine, okanye ezinye inani elincinci lezixhobo ezifanayo ngaphakathi kwephakheji enye.Zidla ngokusetyenziselwa ukwakha iisekethe ezinevoltheji enkulu okanye uxinzelelo lwangoku, okanye ukuqonda imisebenzi yesekethe esisiseko.
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