Intshayelelo kwinkqubo yokuSila nge-wafer
1. Injongo yokuSila ngasemva
Kwinkqubo yokwenza i-semiconductors evela kwi-wafers, ukubonakala kwee-wafers kuhlala kutshintsha.Okokuqala, kwinkqubo yokuvelisa i-wafer, i-Edge kunye nomphezulu we-wafer ipholishelwe, inkqubo edla ngokuguba macala omabini e-wafer.Emva kokuphela kwenkqubo yangaphambili, ungaqala inkqubo yokugaya ngasemva egaya kuphela umva we-wafer, enokususa ukungcoliseka kweekhemikhali kwinkqubo yangaphambili kunye nokunciphisa ubukhulu be-chip, efanelekileyo kakhulu. ukwenzela ukuveliswa kweetshiphusi ezincinci ezifakwe kumakhadi e-IC okanye izixhobo eziphathwayo.Ukongeza, le nkqubo ineenzuzo zokunciphisa ukuchasana, ukunciphisa ukusetyenziswa kwamandla, ukwandisa ukuhanjiswa kwe-thermal kunye nokutshabalalisa ngokukhawuleza ukushisa ngasemva kwe-wafer.Kodwa kwangaxeshanye, ngenxa yokuba i-wafer ibhityile, kulula ukuba iqhekezwe okanye ijijwe ngamandla angaphandle, okwenza inyathelo lokucubungula libe nzima ngakumbi.
2. Ukugaya ngasemva (Ukugaya ngasemva) inkqubo eneenkcukacha
Ukugaya ngasemva kunokwahlulwa ngokwala manyathelo mathathu alandelayo: okokuqala, ncamathelisa iTape yokukhusela iLamination kwi-wafer;Okwesibini, sila umva we-wafer;Okwesithathu, ngaphambi kokwahlula i-chip kwi-Wafer, i-wafer kufuneka ibekwe kwi-Wafer Mounting ekhusela i-tape.Inkqubo ye-wafer patch linqanaba lokulungiselela ukwahlulaitshiphu(ukusika i-chip) kwaye ngoko ke inokuphinda ifakwe kwinkqubo yokusika.Kwiminyaka yakutshanje, njengoko iitshiphusi ziye zincinci, ulandelelwano lwenkqubo lunokutshintsha, kwaye amanyathelo enkqubo aye acocwa ngakumbi.
3. Inkqubo yokuLamination yeTape yokukhusela i-wafer
Isinyathelo sokuqala kwi-back grinding yi-coating.Le yinkqubo yokwaleka encamathela iteyiphu phambi kwe wafer.Xa ukugaya ngasemva, iikhompawundi ze-silicon ziya kusasazeka ngeenxa zonke, kwaye i-wafer inokuphinda iqhekeke okanye i-warp ngenxa yamandla angaphandle ngexesha le nkqubo, kwaye indawo enkulu ye-wafer, iyancipha ngakumbi kule nto.Ngoko ke, ngaphambi kokusila ngasemva, ifilimu eluhlaza okwesibhakabhaka ye-Ultra Violet (UV) iqhotyoshelwe ukukhusela i-wafer.
Xa usebenzisa ifilimu, ukwenzela ukuba ungenzi i-gap okanye i-bubbles emoyeni phakathi kwe-wafer kunye ne-tape, kuyimfuneko ukwandisa amandla okubambelela.Nangona kunjalo, emva kokugaya ngasemva, i-tape kwi-wafer kufuneka ihlaziywe ngokukhanya kwe-ultraviolet ukunciphisa amandla okubambelela.Emva kokuqhawula, i-tape intsalela kufuneka ingahlali kwindawo enqabileyo.Ngamanye amaxesha, inkqubo iya kusebenzisa i-adhesion ebuthathaka kwaye ithande ukuba i-bubble non-ultraviolet yokunciphisa unyango lwe-membrane, nangona zininzi izinto ezingalunganga, kodwa zingabizi.Ukongeza, iifilimu ze-Bump, eziphindwe kabini ubukhulu njenge-membrane zokunciphisa i-UV, nazo ziyasetyenziswa, kwaye kulindeleke ukuba zisetyenziswe ngokuphindaphindiweyo kwixesha elizayo.
4. Ubukhulu be-wafer buhambelana ngokuphambeneyo nephakheji ye-chip
Ubukhulu be-wafer emva kokusila ngasemva buyancitshiswa ukusuka kwi-800-700 µm ukuya kwi-80-70 µm.Ii-wafers ezicuthiweyo ukuya kutsho kwishumi zinokupakisha iileya ezine ukuya kwezintandathu.Kutshanje, ii-wafers zinokucuthwa zibe malunga neemilimitha ezingama-20 ngenkqubo yokusila kabini, ngaloo ndlela zibekwe kwi-16 ukuya kumaleya angama-32, ulwakhiwo lwesemiconductor olunemigangatho emininzi eyaziwa ngokuba yi-multi-chip package (MCP).Kule meko, ngaphandle kokusetyenziswa kweeleyile ezininzi, ukuphakama okupheleleyo kwepakethi egqityiweyo akufanele kudlule ubukhulu obuthile, yiyo loo nto ii-wafers zokugaya ezincinci zihlala zilandelwa.I-wafer iyancipha ngakumbi, iziphene zininzi, kwaye inkqubo elandelayo inzima ngakumbi.Ke ngoko, itekhnoloji ephezulu iyafuneka ukuphucula le ngxaki.
5. Ukutshintsha kwendlela yokugaya ngasemva
Ngokusika ii-wafers zibe zincinci kangangoko unakho ukoyisa imida yeendlela zokusetyenzwa, itekhnoloji yokugaya ngasemva iyaqhubeka nokuvela.Kwiziphaluka eziqhelekileyo ezinobunzima obungama-50 okanye ngaphezulu, ukuSila ngasemva kubandakanya amanyathelo amathathu: UkuSila ngokuQhukumezayo kunye nokuSila ngokuLungileyo, apho isiqwenga somgubo sisikwa kwaye sipolishwe emva kweeseshoni ezimbini zokusila.Ngeli xesha, kufana ne-Chemical Mechanical Polishing (CMP), i-Slurry kunye ne-Deionized Water idla ngokusetyenziswa phakathi kwe-polish pad kunye ne-wafer.Lo msebenzi wokupolisha unokunciphisa ingxabano phakathi kwe-wafer kunye ne-polish pad, kwaye wenze ubuso bukhanye.Xa i-wafer ijiyile, i-Super Fine Grinding ingasetyenziswa, kodwa okukhona i-wafer ibhityile, kokukhona kufuneka ipolishisi ngakumbi.
Ukuba i-wafer iba yincinci, ixhomekeke kwiziphene zangaphandle ngexesha lokusika.Ngoko ke, ukuba ubukhulu be-wafer yi-50 µm okanye ngaphantsi, ulandelelwano lwenkqubo lungatshintshwa.Ngeli xesha, indlela ye-DBG (Dicing Before Grinding) isetyenziswa, oko kukuthi, i-wafer inqunywe kwisiqingatha ngaphambi kokusila kokuqala.Itshiphu yahlulwe ngokukhuselekileyo kwi-wafer ngokolandelelwano lwe-Dicing, ukucola, kunye nokusika.Ukongezelela, kukho iindlela ezikhethekileyo zokugaya ezisebenzisa i-plate yeglasi eyomeleleyo ukukhusela i-wafer ukuba ingaphuli.
Ngokunyuka kwemfuno yokudibanisa kwi-miniaturization yezixhobo zombane, iteknoloji yokugaya ngasemva akufanele inqobe kuphela imida yayo, kodwa iqhubeke nokuphuhlisa.Ngexesha elifanayo, akuyimfuneko kuphela ukuxazulula ingxaki yesiphako se-wafer, kodwa nokulungiselela iingxaki ezintsha ezinokuvela kwinkqubo ezayo.Ukuze kulungiswe ezi ngxaki, kunokuba yimfunekotshintshainkqubo ulandelelwano, okanye ukwazisa iteknoloji etching imichiza esetyenziswa kwiisemiconductorinkqubo-phambili, kwaye uphuhlise ngokupheleleyo iindlela zokusetyenzwa ezintsha.Ukuze ucombulule iziphene zendalo ze-wafers zendawo enkulu, iindlela ezahlukeneyo zokugaya zijongwa.Ukongeza, uphando luyenziwa malunga nendlela yokuphinda kusetyenziswe i-silicon slag eveliswe emva kokusila ii-wafers.
Ixesha lokuposa: Jul-14-2023