I-SN74CB3Q3245RGYR 100% Entsha kunye neyoqobo ye-DC ukuya kwi-DC Isiguquli kunye nokuTshintsha iChip yesiLawuli
Iimpawu zeMveliso
| UHLOBO | UMZEKELISO |
| udidi | Isitshintshi somqondiso, i-multiplexer, idikhowuda |
| umenzi | Texas Instruments |
| uthotho | 74CB |
| usonga | Iteyiphu kunye neepakethe eziqengqelekayo (TR) Ipakethe yetape yokugquma (CT) Digi-Reel® |
| Ubume bemveliso | Iyasebenza |
| uhlobo | Ukutshintsha ibhasi |
| isiphaluka | 8 x 1:1 |
| Isekethe ezimeleyo | 1 |
| Okwangoku - Imveliso iphezulu, iphantsi | - |
| Umthombo wobonelelo lwamandla ombane | Unikezelo lwamandla omnye |
| Umbane - Ubonelelo lwamandla | 2.3V ~ 3.6V |
| Ubushushu bokusebenza | -40°C ~ 85°C |
| Uhlobo lofakelo | Uhlobo lokuncamathelisa ubuso |
| Ukupakishwa/Izindlu | I-20-VFQFN evezwe iphedi |
| Ukufakwa kwecandelo lomthengisi | 20-VQFN (3.5x4.5) |
| Inombolo master Product | 74CB3Q3245 |
Intshayelelo yeMveliso
I-SN74CB3Q3245 sisitshixo sebhasi ye-FET ye-bandwidth ephezulu esebenzisa impompo yentlawulo ukuphakamisa amandla ombane wesango le-transistor yokudlula, ibonelela ngokuxhathisa okuphantsi kunye neflethi kwi-ON-state (iron).I-low and flat ON-state resistance resistance ivumela ukulibaziseka okuncinci kunye nokuxhasa umzila wesitimela ukuya kumzila wesitimela kwi-data input / output (I / O) izibuko.Isixhobo sibonisa i-data ephantsi ye-I / O capacitance yokunciphisa ukulayishwa kwe-capacitive kunye nokuphazamiseka kwesignali kwibhasi yedatha.Ilungiselelwe ngokukodwa ukuxhasa izicelo eziphakamileyo ze-bandwidth, i-SN74CB3Q3245 ibonelela ngesisombululo esilungisiweyo sojongano olufanelekileyo ngokufanelekileyo kunxibelelwano lwebroadband, uthungelwano, kunye neenkqubo zekhompyuter zedatha.
I-SN74CB3Q3245 iququzelelwe njengenguqu yebhasi ye-8-bit kunye ne-output single-enable (OE \) igalelo.Xa i-OE\ iphantsi, iswitshi yebhasi IVULIWE kwaye izibuko i-A iqhagamshelwe kwizibuko le-B, ivumela ukuhamba kwedatha ye-bidirectional phakathi kwamazibuko.Xa i-OE \ iphezulu, ukutshintshwa kwebhasi KUVALIWE kwaye i-high-impedance state ikhona phakathi kwe-A kunye ne-B port.
Esi sixhobo sichazwe ngokupheleleyo kusetyenziso-phantsi lwamandla-phantsi usebenzisa i-Ioff.I-Ioff circuitry ithintela ukonakalisa umva kwangoku kwisixhobo xa iphantsi.Isixhobo sinokwahlulwa ngexesha lokucima kombane.
Ukuqinisekisa i-high-impedance state ngexesha lokunyuka kwamandla okanye ukuhla kwamandla, i-OE kufuneka iboshwe kwi-VCC ngokusebenzisa i-pullup resistor;ixabiso elincinci le-resistor lichongwa ngokukwazi ukucwiliswa kwangoku komqhubi.
Iimpawu zeMveliso
- Umthamo Wedatha Ophezulu (Ukuya kuma-500 MHz↑)
- Ilingana ne-IDTQS3VH384 Isixhobo
- I-5-V iNyamezelo ye-I/Os eneDivaysi i-Powered-Up okanye i-Powered-Down
- Ukuxhathisa okuPhantsi kunye neFlethi ON-State (iron) Iimpawu ngaphaya koHlelo lokuSebenza (iron = 4ΩEqhelekileyo)
- Ukutshintshela kwiSiporo ukuya kwiSiporo seDatha ye-I/O kwiiPortsBidirectional Data Flow, ngokuLibaziseka kweZeroIgalelo eliPhantsi/Isakhono sokuPhuma siNciphisa ukuLayishwa kunye nokuGqwethwa koMqondiso (Cio(OFF) = 3.5 pF Eqhelekileyo)
- 0- ukuya 5-V Ukutshintshela Nge 3.3-V VCC
- 0- ukuya ku-3.3-V Ukutshintshela nge-2.5-V VCC
- UkuTshintsho oluKhawulezayo Frequency (fOE\ = 20 MHz Max)
- Idatha kunye neeNgeniso zoLawulo zibonelela ngee-Undershoot Clamp Diodes
- Ukusetyenziswa koMbane oPhantsi (ICC = 1 mA Eqhelekileyo)
- Uluhlu oluSebenzayo lweVCC Ukusuka kwi-2.3 V ukuya kwi-3.6 V
- INkxaso yeDatha ye-I / Os 0 ukuya ku-5-V Amanqanaba oMbonakaliso (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Ulawulo lweeNgeniso lunokuqhutywa yi-TTL okanye i-5-V/3.3-V Iziphumo ze-CMOS
- Ioff ixhasa iNdlela yokuSebenza ngokuNgamandla-amandla-ezantsi
- I-Latch-Up Performance Igqithisa kwi-100 mA nge-JESD 78, udidi II
- Ukuvavanywa kokuSebenza kwe-ESD nge-JESD 22Ixhasa zombini iDigital kunye ne-Analog Applications: I-PCI Interface, i-Differential Signal Interface, i-Memory Interleaving, i-Bus Isolation, i-Low-Distortion Signal Gate.
- 2000-V uMzekelo woMzimba woMntu (A114-B, Udidi II)
- I-1000-V iCharged-Device Model (C101)
IiNzuzo zeMveliso
- ulawulo lwe-thermal kunye nokukhuselwa kwe-overvoltage
Ulawulo lobushushu ngomnye umngeni omkhulu kubayili betshaja yebhetri.Yonke itshiphu yetshaja ifumana ukuhla kwamandla ombane ngexesha lenkqubo yokutshaja ngenxa yokutshatyalaliswa kobushushu.Ukunqanda ukonakala kwebhetri okanye ukuvalwa kwenkqubo, uninzi lweetshaja zisebenzisa indlela yokulawula ubushushu.Izixhobo ezitsha zisebenzisa iindlela ezintsonkothileyo zokuphendula ukujonga ngokuqhubekayo ubushushu bokufa kunye nokulungelelanisa intlawulo yangoku ngokuguquguqukayo okanye ngokubala ngomlinganiselo ohambelana notshintsho kwiqondo lobushushu elingqongileyo.Ubukrelekrele bakhelwe ngaphakathi buvumela itshiphu yetshaja yangoku ukuba icuthe kancinci umsinga wokutshaja de kufike ukulingana kwe-thermal kunye nobushushu bokufa buyeke ukunyuka.Obu buchwepheshe buvumela itshaja ukuba iqhubeke ukutshaja ibhetri ngowona mlinganiselo uphezulu ukhoyo ngoku ngaphandle kokubangela ukuba isixokelelwano sivale, nto leyo inciphisa ixesha lokutshaja kwebhetri.Uninzi lwezixhobo ezitsha namhlanje ziya kongeza indlela yokukhusela i-overvoltage.
Itshaja ye-BQ25616JRTWRIbonelela ngeempawu zokhuseleko ezahlukeneyo zokutshaja ibhetri kunye nokusebenza kwenkqubo, kubandakanywa ujongo lwe-thermistor engafanelekanga yebhetri, ukutshaja isibali-xesha sokhuseleko kunye nokugqithisa kunye nokhuseleko lwangoku.Ulawulo lwe-Thermal lunciphisa intlawulo yangoku xa ubushushu besiphambuka budlula i-110°C.Isiphumo se-STAT sibika imeko yokutshaja kunye naziphi na iimeko eziphosakeleyo.
Iimeko zeSicelo
Itshiphu yetshaja yebhetri yeyohlobo lwetshiphu yolawulo lwamandla, uluhlu lwesicelo lubanzi kakhulu.Ukuphuhliswa kweetshiphusi zolawulo lwamandla kubalulekile ekuphuculeni ukusebenza komatshini wonke, ukukhethwa kweetshiphusi zolawulo lwamandla kuhambelana ngokuthe ngqo neemfuno zenkqubo, ngelixa ukuphuhliswa kweetshiphusi zolawulo lwamandla edijithali kusafuneka ukuwela umqobo weendleko.
I-BQ25616/616J idityaniswe kakhulu i-3-A yokutshintsha-imowudi yolawulo lwentlawulo yebhetri kunye nesixhobo sokulawula indlela yamandla esixhobo kwiseli enye i-Li-Ion kunye ne-Li-polymer ibhetri.Isisombululo sidityaniswe kakhulu ne-FET (RBFET, Q1), i-high-side switching FET (HSFET, Q2), iFET (LSFET, Q3), kunye ne-FET yebhetri (BATFET, Q4) phakathi kwenkqubo kunye ibhetri.Indlela yombane ephantsi yombane iphucula ukusebenza kwemowudi yokutshintsha, inciphisa ixesha lokutshaja ibhetri kwaye yandise ixesha lokuqhuba kwebhetri ngexesha lesigaba sokukhupha.
I-BQ25616/616J idityaniswe kakhulu i-3-A yokutshintsha-imowudi yolawulo lwentlawulo yebhetri kunye nenkqubo yolawulo lweNdlela yoMbane yesixhobo kwi-Li-ion kunye ne-Li-polymer iibhetri.Ifaka ukutshaja okukhawulezayo kunye nenkxaso yombane ophezulu wokufakwa kuluhlu olubanzi lwezicelo ezibandakanya izithethi, ishishini, kunye nezixhobo eziphathwayo zonyango.Indlela yayo yamandla ephantsi yokuthintela iphucula ukusebenza kwemowudi yokutshintsha, inciphisa ixesha lokutshaja ibhetri, kwaye yandisa ixesha lokubaleka kwebhetri ngexesha lesigaba sokukhupha.Igalelo layo lombane kunye nommiselo wangoku uhambisa amandla aphezulu okutshaja kwibhetri.
Isisombululo sidityaniswe kakhulu ne-FET (RBFET, Q1), i-high-side switching FET (HSFET, Q2), iFET (LSFET, Q3), kunye ne-FET yebhetri (BATFET, Q4) phakathi kwenkqubo kunye ibhetri.Ikwadibanisa i-bootstrap diode ye-high-side gate drive yoyilo lwenkqubo olulula.Ukusetwa kwehardware kunye nengxelo yobume kunika uqwalaselo olulula ukuseta isisombululo sokutshaja.
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