10AX066H3F34E2SG 100% Entsha kunye neyoqobo yoKwahlula Iamplifier 1 Umahluko weSekethe 8-SOP
Iimpawu zeMveliso
I-EU RoHS | Ukuthobela |
I-ECCN (US) | 3A001.a.7.b |
Ubume benxalenye | Iyasebenza |
HTS | 8542.39.00.01 |
Iimoto | No |
I-PPAP | No |
Igama losapho | Arria® 10 GX |
Inkqubo yeTekhnoloji | 20nm |
Umsebenzisi I/Os | 492 |
Inani leerejista | 1002160 |
Umbane woBonelelo oluSebenzayo (V) | 0.9 |
Iingongoma eziNgqiqo | 660000 |
Inani leZiphindaphindo | 3356 (18x19) |
Uhlobo lweMemori yeNkqubo | SRAM |
Inkumbulo Enzinzisiweyo (Kbit) | 42660 |
Inani elipheleleyo leBlock RAM | 2133 |
IiYunithi zokuQiniseka kweSixhobo | 660000 |
Inombolo yeDivaysi yee-DLLs/PLLs | 16 |
Imijelo yeTransceiver | 24 |
Isantya seTransceiver (Gbps) | 17.4 |
I-DSP ezinikeleyo | 1678 |
PCIe | 2 |
Ukucwangcisa | Ewe |
Inkxaso yokuhlengahlengiswa | Ewe |
Khuphela Khusela | Ewe |
I-In-System Programmability | Ewe |
Ibanga lesantya | 3 |
Imigangatho ye-I/O enesiphelo esinye | LVTTL|LVCMOS |
Ujongano Lwenkumbulo Yangaphandle | DDR3 SDRAM|DDR4|LPDDR3|RLDRAM II|RLDRAM III|QDRII+SRAM |
Ubuncinci bombane wokuSebenza (V) | 0.87 |
Eyona Voltage yoBonelelo oluPhezulu (V) | 0.93 |
I/O Voltage (V) | 1.2|1.25|1.35|1.5|1.8|2.5|3 |
Ubuncinci boBubushushu bokusebenza (°C) | 0 |
Obona bushushu bokusebenza (°C) | 100 |
Supplier Ibanga lobushushu | Yandisiwe |
Igama lorhwebo | Arria |
Ukunyuka | INtaba engaphezulu |
Iphakheji Height | 2.63 |
Ububanzi bePakethi | 35 |
Ubude bePakethi | 35 |
PCB itshintshile | 1152 |
Igama lePhakeji eliMgangatho | BGA |
Supplier Package | FC-FBGA |
Pin Bala | 1152 |
Imilo yokukhokela | Ibhola |
Uhlobo lweSekethe eDityanisiweyo
Xa kuthelekiswa nee-electron, iifotoni azikho ubunzima obungaguqukiyo, ukusebenzisana okubuthathaka, amandla okuchasana nokuphazamiseka, kwaye zifaneleke ngakumbi ukuhanjiswa kolwazi.I-Optical interconnection kulindeleke ukuba ibe yitekhnoloji engundoqo yokuqhekeza udonga lokusetyenziswa kwamandla, udonga lokugcina kunye nodonga lonxibelelwano.I-Illuminant, coupler, imodyuli, izixhobo ze-waveguide zidityanisiwe kwiimpawu eziphezulu ze-optical density optical ezifana ne-photoelectric edibeneyo yenkqubo encinci, inokuqonda umgangatho, umthamo, ukusetyenziswa kwamandla okudibanisa kwe-photoelectric ephezulu, iqonga lokudibanisa i-photoelectric kuquka i-III - V i-compound semiconductor monolithic edibeneyo (INP ) iqonga lokudibanisa i-passive, i-silicate okanye iglasi (i-planar optical waveguide, i-PLC) iqonga kunye neqonga elisekelwe kwi-silicon.
I-platform ye-InP isetyenziselwa ukuveliswa kwe-laser, i-modulator, i-detector kunye nezinye izixhobo ezisebenzayo, inqanaba lobuchwepheshe obuphantsi, ixabiso eliphezulu le-substrate;Ukusebenzisa iqonga le-PLC ukuvelisa amacandelo angenayo, ilahleko ephantsi, umthamo omkhulu;Ingxaki enkulu kumaqonga omabini kukuba izinto azihambelani ne-silicon-based electronics.Olona ncedo lubalaseleyo lokudityaniswa kwe-silicon-based photonic kukuba inkqubo iyahambelana nenkqubo ye-CMOS kwaye ixabiso lemveliso liphantsi, ngoko ke ithathwa njengeyona nto inokubakho kwi-optoelectronic kunye neskimu sokuhlanganisa yonke into.
Kukho iindlela ezimbini zokudityaniswa kwezixhobo ze-silicon-based photonic kunye neesekethe ze-CMOS.
Inzuzo yangaphambili kukuba izixhobo zefotonic kunye nezixhobo zombane zinokuphuculwa ngokwahlukileyo, kodwa ukupakishwa okulandelayo kunzima kwaye izicelo zorhwebo zilinganiselwe.Le yokugqibela inzima ukuyila kunye nokuqhuba ukuhlanganiswa kwezi zixhobo zimbini.Okwangoku, indibano ye-hybrid esekwe kuhlanganiso lwamasuntswana enyukliya lolona khetho lulungileyo