AQX IRF7416TRPBF Itshiphu entsha kunye nentsusa ehlanganisiweyo yeSekethe ic IRF7416TRPBF
Iimpawu zeMveliso
| UHLOBO | INKCAZO |
| Udidi | IiMveliso zeSemiconductor eziDibeneyo |
| Mfr | Infineon Technologies |
| Uthotho | HEXFET® |
| Iphakheji | Iteyiphu & neReel (TR) Sika iTape (CT) Digi-Reel® |
| Ubume beMveliso | Iyasebenza |
| Uhlobo lweFET | IP-Channel |
| Iteknoloji | I-MOSFET (i-Metal oxide) |
| Khupha ukuya kuMthombo weVoltage (Vdss) | 30 V |
| Okwangoku – Ukutsalwa kwamanzi okuqhubekayo (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Intlawulo yeSango (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Vgs (Ubukhulu) | ±20V |
| Igalelo Lobuchule (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
| Inqaku leFET | - |
| Ukuchithwa kwamandla (Ubukhulu) | 2.5W (Ta) |
| Ubushushu bokusebenza | -55°C ~ 150°C (TJ) |
| Uhlobo lokuNqamisa | INtaba engaphezulu |
| Supplier Device Package | 8-SO |
| Ipakethe / Ityala | 8-SOIC (0.154″, 3.90mm Ububanzi) |
| Inombolo yeMveliso esisiseko | IRF7416 |
Amaxwebhu & nemidiya
| UHLOBO LWEZIBONELELO | LINK |
| Amaxwebhu edatha | IRF7416PbF |
| Amanye Amaxwebhu Ayeleleneyo | Inkqubo yokuNombola iCandelo le-IR |
| IiModyuli zoQeqesho lweMveliso | IiSekethe eziDityanisiweyo zoMbane oPhezulu (Abaqhubi beSango le-HVIC) |
| Imveliso ekhoyo | IiNkqubo zokuCwangcisa iDatha |
| HTML Datasheet | IRF7416PbF |
| Iimodeli ze-EDA | IRF7416TRPBF nguMgcini-zincwadi we-Ultra |
| Iimodeli zokulinganisa | Imodeli ye-IRF7416PBF |
Ulwahlulo lokusiNgqongileyo nokuThunyela ngaphandle
| UMBALI | INKCAZO |
| Isimo seRoHS | I-ROHS3 iyahambelana |
| iNqanaba lokuSensitivity lokufuma (MSL) | 1 (Ayinasiphelo) |
| FIKELELA kwiSimo | FIKELELA Ngokungachaphazelekiyo |
| ECCN | I-EAR99 |
| HTSUS | 8541.29.0095 |
Izibonelelo ezongezelelweyo
| UMBALI | INKCAZO |
| Amanye Amagama | IRF7416TRPBFDKR SP001554262 IRF7416TRPBFCT IRF7416TRPBF-ND IRF7416TRPBFTR |
| Ipakethe esemgangathweni | 4,000 |
IRF7416
Iingenelo
Ulwakhiwo lweseli olucwangcisiweyo lwe-SOA ebanzi
Ilungiselelwe ukufumaneka okubanzi ukusuka kumahlakani osasazo
Isiqinisekiso seMveliso ngokwemigangatho yeJEDEC
I-Silicon elungiselelwe usetyenziso olutshintshayo ngaphantsi kwe-<100KHz
Ipakeji yamandla ekumgangatho weshishini lomphezulu wentaba
Iyakwazi ukuthengiswa ngamaza
-30V Single P-Channel HEXFET Power MOSFET kwi SO-8 iphakheji
Iingenelo
I-RoHS iyahambelana
I-RDS ephantsi (ivuliwe)
Umgangatho ohamba phambili kwishishini
IDynamic Dv/dt Rating
Ukutshintsha ngokukhawuleza
Ngokupheleleyo iAvalanche Rated
175°C Ubushushu bokusebenza
I-P-Channel MOSFET
Transistor
I-transistor yi-aisixhobo semiconductoriqhele ukukhulisaokanyetshintshaiimpawu zombane kunyeamandla.I-transistor yenye yeebhloko zokwakha ezisisiseko zale mihlaizinto zombane.[1]Yenziwe ngeimathiriyeli ye-semiconductor, ngokuqhelekileyo ubuncinane ezintathuiitheminaliukudibanisa kwisekethe ye-elektroniki.AI-Voltageokanyeyangokuesetyenziswa kwiperi enye yeetheminali zetransistor ilawula umsinga ngenye iperi yeetheminali.Ngenxa yokuba amandla alawulwayo (imveliso) anokuba phezulu kunamandla okulawula (igalelo), i-transistor inokukhulisa isignali.Ezinye iitransistors zipakishwe ngokwahlukeneyo, kodwa ezininzi ngakumbi zifunyenwe zifakwe ngaphakathiiisekethe ezidibeneyo.
IAustria-Hungarian ingcali yefiziksi UJulius Edgar Lilienfelducebise ingqikelelo ye-aI-transistor ye-field-effectngo-1926, kodwa kwakungenakwenzeka ukwakhiwa isixhobo esisebenzayo ngelo xesha.[2]Isixhobo sokuqala esisebenzayo esakhiwayo yayisipoint-contact transistoryasungulwa ngo-1947 ziingcali zefiziksi zaseMelikaUJohn BardeenkwayeWalter Brattainngelixa usebenza phantsiUWilliam ShockleyeBell Labs.Aba bathathu babelana ngo-1956Ibhaso leNobel kwiFiziksikwimpumelelo yabo.[3]Olona hlobo lusetyenziswa kakhulu lwetransistor lumetal-oxide-semiconductor field-effect transistor(MOSFET), eyaqanjwa nguU-Mohamed AtallakwayeDawon KahngeBell Labs ngo-1959.[4][5][6]Iitransistors zaliguqula icandelo lezobuchwephesha, kwaye zavula indlela yencinci kunye nexabiso eliphantsioonomathotholo,izixhobo zokubala, kwayeiikhompyutha, phakathi kwezinye izinto.
Uninzi lwee-transistors zenziwe ngokucoceka kakhuluisilicon, kwaye abanye ukusukaigermaniumKodwa ngamanye amaxesha kusetyenziswa ezinye izixhobo ze-semiconductor.I-transistor inokuba nohlobo olunye kuphela lomthwali wentlawulo, kwi-transistor enesiphumo sangaphandle, okanye inokuba neentlobo ezimbini zabathwali bentlawuloi-bipolar junction transistorizixhobo.Xa kuthelekiswa neityhubhu yokufunxa, ii-transistors zincinci kwaye zifuna amandla amancinci ukuze zisebenze.Iityhubhu ezithile zokufunxa zineengenelo ngaphezu kweetransistors kumaza okusebenza aphezulu kakhulu okanye umbane osebenza kakhulu.Iindidi ezininzi zee-transistors zenziwa kwimilinganiselo esemgangathweni ngabavelisi abaninzi.
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