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iimveliso

IPD068P03L3G entsha yoqobo yezixhobo zoMbane ze-IC chip Inkonzo ye-MCU BOM kwisitokhwe IPD068P03L3G

inkcazelo emfutshane:


Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu zeMveliso

UHLOBO INKCAZO
Udidi IiMveliso zeSemiconductor eziDibeneyo

IiTransistors – FETs, MOSFETs – One

Mfr Infineon Technologies
Uthotho I-OptiMOS™
Iphakheji Iteyiphu & neReel (TR)

Sika iTape (CT)

Digi-Reel®

Ubume beMveliso Iyasebenza
Uhlobo lweFET IP-Channel
Iteknoloji I-MOSFET (i-Metal oxide)
Khupha ukuya kuMthombo weVoltage (Vdss) 30 V
Okwangoku – Ukutsalwa kwamanzi okuqhubekayo (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 2V @ 150µA
Intlawulo yeSango (Qg) (Max) @ Vgs 91 nC @ 10 V
Vgs (Ubukhulu) ±20V
Igalelo Lobuchule (Ciss) (Max) @ Vds 7720 pF @ 15 V
Inqaku leFET -
Ukuchithwa kwamandla (Ubukhulu) 100W (Tc)
Ubushushu bokusebenza -55°C ~ 175°C (TJ)
Uhlobo lokuNqamisa INtaba engaphezulu
Supplier Device Package PG-TO252-3
Ipakethe / Ityala TO-252-3, DPak (2 Lead + Tab), SC-63
Inombolo yeMveliso esisiseko IPD068

Amaxwebhu & nemidiya

UHLOBO LWEZIBONELELO LINK
Amaxwebhu edatha IPD068P03L3 G
Amanye Amaxwebhu Ayeleleneyo ISikhokelo senani leNombolo
Imveliso ekhoyo IiNkqubo zokuCwangcisa iDatha
HTML Datasheet IPD068P03L3 G
Iimodeli ze-EDA IPD068P03L3GATMA1 nguMgcini wethala leencwadi

Ulwahlulo lokusiNgqongileyo nokuThunyela ngaphandle

UMBALI INKCAZO
Isimo seRoHS I-ROHS3 iyahambelana
iNqanaba lokuSensitivity lokufuma (MSL) 1 (Ayinasiphelo)
FIKELELA kwiSimo FIKELELA Ngokungachaphazelekiyo
ECCN I-EAR99
HTSUS 8541.29.0095

Izibonelelo ezongezelelweyo

UMBALI INKCAZO
Amanye Amagama IPD068P03L3GATMA1DKR

IPD068P03L3GATMA1-ND

SP001127838

IPD068P03L3GATMA1CT

IPD068P03L3GATMA1TR

Ipakethe esemgangathweni 2,500

Transistor

I-transistor yi-aisixhobo semiconductoriqhele ukukhulisaokanyetshintshaiimpawu zombane kunyeamandla.I-transistor yenye yeebhloko zokwakha ezisisiseko zale mihlaizinto zombane.[1]Yenziwe ngeimathiriyeli ye-semiconductor, ngokuqhelekileyo ubuncinane ezintathuiitheminaliukudibanisa kwisekethe ye-elektroniki.AI-Voltageokanyeyangokuesetyenziswa kwiperi enye yeetheminali zetransistor ilawula umsinga ngenye iperi yeetheminali.Ngenxa yokuba amandla alawulwayo (imveliso) anokuba phezulu kunamandla okulawula (igalelo), i-transistor inokukhulisa isignali.Ezinye iitransistors zipakishwe ngokwahlukeneyo, kodwa ezininzi ngakumbi zifunyenwe zifakwe ngaphakathiiisekethe ezidibeneyo.

IAustria-Hungarian ingcali yefiziksi UJulius Edgar Lilienfelducebise ingqikelelo ye-aI-transistor ye-field-effectngo-1926, kodwa kwakungenakwenzeka ukwakhiwa isixhobo esisebenzayo ngelo xesha.[2]Isixhobo sokuqala esisebenzayo esakhiwayo yayisipoint-contact transistoryasungulwa ngo-1947 ziingcali zefiziksi zaseMelikaUJohn BardeenkwayeWalter Brattainngelixa usebenza phantsiUWilliam ShockleyeBell Labs.Aba bathathu babelana ngo-1956Ibhaso leNobel kwiFiziksikwimpumelelo yabo.[3]Olona hlobo lusetyenziswa kakhulu lwetransistor lumetal-oxide-semiconductor field-effect transistor(MOSFET), eyaqanjwa nguU-Mohamed AtallakwayeDawon KahngeBell Labs ngo-1959.[4][5][6]Iitransistors zaliguqula icandelo lezobuchwephesha, kwaye zavula indlela yencinci kunye nexabiso eliphantsioonomathotholo,izixhobo zokubala, kwayeiikhompyutha, phakathi kwezinye izinto.

Uninzi lwee-transistors zenziwe ngokucoceka kakhuluisilicon, kwaye abanye ukusukaigermaniumKodwa ngamanye amaxesha kusetyenziswa ezinye izixhobo ze-semiconductor.I-transistor inokuba nohlobo olunye kuphela lomthwali wentlawulo, kwi-transistor enesiphumo sangaphandle, okanye inokuba neentlobo ezimbini zabathwali bentlawuloi-bipolar junction transistorizixhobo.Xa kuthelekiswa neityhubhu yokufunxa, ii-transistors zincinci kwaye zifuna amandla amancinci ukuze zisebenze.Iityhubhu ezithile zokufunxa zineengenelo ngaphezu kweetransistors kumaza okusebenza aphezulu kakhulu okanye umbane osebenza kakhulu.Iindidi ezininzi zee-transistors zenziwa kwimilinganiselo esemgangathweni ngabavelisi abaninzi.


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