IPD042P03L3G BTS5215LAUMA1 IC Chip eNtsha yecandelo loMbane

IPD042P03L3G BTS5215LAUMA1 IC Chip eNtsha yecandelo loMfanekiso oboniswayo

inkcazelo emfutshane:

Thumela i-imeyile kuthi Khuphela i-Datesheet

Iinkcukacha zeMveliso

Iithegi zeMveliso

IPD042P03L3 G
Imo ye-P-channel yokuphucula i-Field-Effect Transistor (FET), -30 V, D-PAK
Iintsapho ze-Infineon ezivelisa izinto ezintsha ze-Opti MOS™ ziquka ii-MOSFET zamandla e-p-chaneli.Ezi mveliso zihlala zihlangabezana nowona mgangatho uphezulu kunye neemfuno zokusebenza kwiinkcukacha eziphambili zoyilo lwenkqubo yamandla njengokumelana nombuso kunye nenani leempawu zokufaneleka.

Isishwankathelo seempawu
Indlela yokuphucula
Inqanaba lengqiqo
I-Avalanche ilinganiswe
Ukutshintsha ngokukhawuleza
Dv/dt ikaliwe
I-Pb-free lead-plating
I-RoHS iyahambelana, i-Halogen-free
Ufanelekile ngokwe-AEC Q101
Usetyenziso olunokwenzeka
Imisebenzi yoLawulo lwaMandla
Ulawulo lweemoto
Itshaja ekwibhodi
DC-DC
Umthengi
Abaguquleli benqanaba lengqiqo
Abaqhubi besango le-MOSFET lamandla
Ezinye iinkqubo zokutshintsha

Iinkcukacha

Uphawu lweMveliso	Ixabiso lophawu
Umenzi:	Infineon
Udidi lweMveliso:	I-MOSFET
RoHS:	Iinkcukacha
Itekhnoloji:	Si
Isimbo sokuNqamisa:	SMD/SMT
Umqulu / Ityala:	UKUYA-252-3
I-Transistor Polarity:	IP-Channel
Inani lamatshaneli:	Ijelo eli-1
I-Vds – iVoltage yoLwahlulo loMthombo wokuGxotha:	30 V
I-Id – Ukutsalwa ngokuqhubekayo kwangoku:	70 A
I-Rds On – Ukunyangwa kweMithombo yoMbhobho:	3.5 mOhms
IiVgs – iSango-Umthombo wombane:	- 20 V, + 20 V
Vgs th – iSango-uMthombo woMbane woMbane:	2 V
Qg – Intlawulo yeSango:	175 nC
Ubuncinci bobushushu bokusebenza:	- 55 C
Obona bushushu bokusebenza:	+ 175 C
I-Pd-Ukuchithwa kwamandla:	150 W
Indlela yesitishi:	Uphuculo
Igama loRhwebo:	I-OptiMOS
Ukupakishwa:	I-Reel
Ukupakishwa:	Sika iTape
Ukupakishwa:	MouseReel
Uphawu:	Infineon Technologies
Ubumbeko:	Ungatshatanga
Ixesha Lokuwa:	22 ns
ITransconductance phambili – Min:	65 S
Ubude:	2.3 mm
Ubude:	6.5 mm
Uhlobo lweMveliso:	I-MOSFET
Ixesha lokunyuka:	167 ns
Uthotho:	I-OptiMOS P3
Ubungakanani bePakethi yoMzi-mveliso:	2500
Uluhlu olungaphantsi:	Ii-MOSFETs
Uhlobo lweTransistor:	I-1 ye-P-Channel
Ixesha Elilibazisekayo LokuCima:	89ns
Ixesha Elilibazisekayo LokuLayita:	21 ns
Ububanzi:	6.22 mm
Inxalenye # Izifakelo:	IPD42P3L3GXT SP000473922 IPD042P03L3GBTMA1
Ubunzima beyunithi:	0.011640 oz