IPD068P03L3G entsha yoqobo yezixhobo zoMbane ze-IC chip Inkonzo ye-MCU BOM kwisitokhwe IPD068P03L3G
Iimpawu zeMveliso
UHLOBO | INKCAZO |
Udidi | IiMveliso zeSemiconductor eziDibeneyo |
Mfr | Infineon Technologies |
Uthotho | I-OptiMOS™ |
Iphakheji | Iteyiphu & neReel (TR) Sika iTape (CT) Digi-Reel® |
Ubume beMveliso | Iyasebenza |
Uhlobo lweFET | IP-Channel |
Iteknoloji | I-MOSFET (i-Metal oxide) |
Khupha ukuya kuMthombo weVoltage (Vdss) | 30 V |
Okwangoku – Ukutsalwa kwamanzi okuqhubekayo (Id) @ 25°C | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.8mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id | 2V @ 150µA |
Intlawulo yeSango (Qg) (Max) @ Vgs | 91 nC @ 10 V |
Vgs (Ubukhulu) | ±20V |
Igalelo Lobuchule (Ciss) (Max) @ Vds | 7720 pF @ 15 V |
Inqaku leFET | - |
Ukuchithwa kwamandla (Ubukhulu) | 100W (Tc) |
Ubushushu bokusebenza | -55°C ~ 175°C (TJ) |
Uhlobo lokuNqamisa | INtaba engaphezulu |
Supplier Device Package | PG-TO252-3 |
Ipakethe / Ityala | TO-252-3, DPak (2 Lead + Tab), SC-63 |
Inombolo yeMveliso esisiseko | IPD068 |
Amaxwebhu & nemidiya
UHLOBO LWEZIBONELELO | LINK |
Amaxwebhu edatha | IPD068P03L3 G |
Amanye Amaxwebhu Ayeleleneyo | ISikhokelo senani leNombolo |
Imveliso ekhoyo | IiNkqubo zokuCwangcisa iDatha |
HTML Datasheet | IPD068P03L3 G |
Iimodeli ze-EDA | IPD068P03L3GATMA1 nguMgcini wethala leencwadi |
Ulwahlulo lokusiNgqongileyo nokuThunyela ngaphandle
UMBALI | INKCAZO |
Isimo seRoHS | I-ROHS3 iyahambelana |
iNqanaba lokuSensitivity lokufuma (MSL) | 1 (Ayinasiphelo) |
FIKELELA kwiSimo | FIKELELA Ngokungachaphazelekiyo |
ECCN | I-EAR99 |
HTSUS | 8541.29.0095 |
Izibonelelo ezongezelelweyo
UMBALI | INKCAZO |
Amanye Amagama | IPD068P03L3GATMA1DKR IPD068P03L3GATMA1-ND SP001127838 IPD068P03L3GATMA1CT IPD068P03L3GATMA1TR |
Ipakethe esemgangathweni | 2,500 |
Transistor
I-transistor yi-aisixhobo semiconductoriqhele ukukhulisaokanyetshintshaiimpawu zombane kunyeamandla.I-transistor yenye yeebhloko zokwakha ezisisiseko zale mihlaizinto zombane.[1]Yenziwe ngeimathiriyeli ye-semiconductor, ngokuqhelekileyo ubuncinane ezintathuiitheminaliukudibanisa kwisekethe ye-elektroniki.AI-Voltageokanyeyangokuesetyenziswa kwiperi enye yeetheminali zetransistor ilawula umsinga ngenye iperi yeetheminali.Ngenxa yokuba amandla alawulwayo (imveliso) anokuba phezulu kunamandla okulawula (igalelo), i-transistor inokukhulisa isignali.Ezinye iitransistors zipakishwe ngokwahlukeneyo, kodwa ezininzi ngakumbi zifunyenwe zifakwe ngaphakathiiisekethe ezidibeneyo.
IAustria-Hungarian ingcali yefiziksi UJulius Edgar Lilienfelducebise ingqikelelo ye-aI-transistor ye-field-effectngo-1926, kodwa kwakungenakwenzeka ukwakhiwa isixhobo esisebenzayo ngelo xesha.[2]Isixhobo sokuqala esisebenzayo esakhiwayo yayisipoint-contact transistoryasungulwa ngo-1947 ziingcali zefiziksi zaseMelikaUJohn BardeenkwayeWalter Brattainngelixa usebenza phantsiUWilliam ShockleyeBell Labs.Aba bathathu babelana ngo-1956Ibhaso leNobel kwiFiziksikwimpumelelo yabo.[3]Olona hlobo lusetyenziswa kakhulu lwetransistor lumetal-oxide-semiconductor field-effect transistor(MOSFET), eyaqanjwa nguU-Mohamed AtallakwayeDawon KahngeBell Labs ngo-1959.[4][5][6]Iitransistors zaliguqula icandelo lezobuchwephesha, kwaye zavula indlela yencinci kunye nexabiso eliphantsioonomathotholo,izixhobo zokubala, kwayeiikhompyutha, phakathi kwezinye izinto.
Uninzi lwee-transistors zenziwe ngokucoceka kakhuluisilicon, kwaye abanye ukusukaigermaniumKodwa ngamanye amaxesha kusetyenziswa ezinye izixhobo ze-semiconductor.I-transistor inokuba nohlobo olunye kuphela lomthwali wentlawulo, kwi-transistor enesiphumo sangaphandle, okanye inokuba neentlobo ezimbini zabathwali bentlawuloi-bipolar junction transistorizixhobo.Xa kuthelekiswa neityhubhu yokufunxa, ii-transistors zincinci kwaye zifuna amandla amancinci ukuze zisebenze.Iityhubhu ezithile zokufunxa zineengenelo ngaphezu kweetransistors kumaza okusebenza aphezulu kakhulu okanye umbane osebenza kakhulu.Iindidi ezininzi zee-transistors zenziwa kwimilinganiselo esemgangathweni ngabavelisi abaninzi.