IPD068P03L3G entsha yoqobo yezixhobo zoMbane ze-IC chip Inkonzo ye-MCU BOM kwisitokhwe IPD068P03L3G
Iimpawu zeMveliso
| UHLOBO | INKCAZO |
| Udidi | IiMveliso zeSemiconductor eziDibeneyo |
| Mfr | Infineon Technologies |
| Uthotho | I-OptiMOS™ |
| Iphakheji | Iteyiphu & neReel (TR) Sika iTape (CT) Digi-Reel® |
| Ubume beMveliso | Iyasebenza |
| Uhlobo lweFET | IP-Channel |
| Iteknoloji | I-MOSFET (i-Metal oxide) |
| Khupha ukuya kuMthombo weVoltage (Vdss) | 30 V |
| Okwangoku – Ukutsalwa kwamanzi okuqhubekayo (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 70A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 150µA |
| Intlawulo yeSango (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Vgs (Ubukhulu) | ±20V |
| Igalelo Lobuchule (Ciss) (Max) @ Vds | 7720 pF @ 15 V |
| Inqaku leFET | - |
| Ukuchithwa kwamandla (Ubukhulu) | 100W (Tc) |
| Ubushushu bokusebenza | -55°C ~ 175°C (TJ) |
| Uhlobo lokuNqamisa | INtaba engaphezulu |
| Supplier Device Package | PG-TO252-3 |
| Ipakethe / Ityala | TO-252-3, DPak (2 Lead + Tab), SC-63 |
| Inombolo yeMveliso esisiseko | IPD068 |
Amaxwebhu & nemidiya
| UHLOBO LWEZIBONELELO | LINK |
| Amaxwebhu edatha | IPD068P03L3 G |
| Amanye Amaxwebhu Ayeleleneyo | ISikhokelo senani leNombolo |
| Imveliso ekhoyo | IiNkqubo zokuCwangcisa iDatha |
| HTML Datasheet | IPD068P03L3 G |
| Iimodeli ze-EDA | IPD068P03L3GATMA1 nguMgcini wethala leencwadi |
Ulwahlulo lokusiNgqongileyo nokuThunyela ngaphandle
| UMBALI | INKCAZO |
| Isimo seRoHS | I-ROHS3 iyahambelana |
| iNqanaba lokuSensitivity lokufuma (MSL) | 1 (Ayinasiphelo) |
| FIKELELA kwiSimo | FIKELELA Ngokungachaphazelekiyo |
| ECCN | I-EAR99 |
| HTSUS | 8541.29.0095 |
Izibonelelo ezongezelelweyo
| UMBALI | INKCAZO |
| Amanye Amagama | IPD068P03L3GATMA1DKR IPD068P03L3GATMA1-ND SP001127838 IPD068P03L3GATMA1CT IPD068P03L3GATMA1TR |
| Ipakethe esemgangathweni | 2,500 |
Transistor
I-transistor yi-aisixhobo semiconductoriqhele ukukhulisaokanyetshintshaiimpawu zombane kunyeamandla.I-transistor yenye yeebhloko zokwakha ezisisiseko zale mihlaizinto zombane.[1]Yenziwe ngeimathiriyeli ye-semiconductor, ngokuqhelekileyo ubuncinane ezintathuiitheminaliukudibanisa kwisekethe ye-elektroniki.AI-Voltageokanyeyangokuesetyenziswa kwiperi enye yeetheminali zetransistor ilawula umsinga ngenye iperi yeetheminali.Ngenxa yokuba amandla alawulwayo (imveliso) anokuba phezulu kunamandla okulawula (igalelo), i-transistor inokukhulisa isignali.Ezinye iitransistors zipakishwe ngokwahlukeneyo, kodwa ezininzi ngakumbi zifunyenwe zifakwe ngaphakathiiisekethe ezidibeneyo.
IAustria-Hungarian ingcali yefiziksi UJulius Edgar Lilienfelducebise ingqikelelo ye-aI-transistor ye-field-effectngo-1926, kodwa kwakungenakwenzeka ukwakhiwa isixhobo esisebenzayo ngelo xesha.[2]Isixhobo sokuqala esisebenzayo esakhiwayo yayisipoint-contact transistoryasungulwa ngo-1947 ziingcali zefiziksi zaseMelikaUJohn BardeenkwayeWalter Brattainngelixa usebenza phantsiUWilliam ShockleyeBell Labs.Aba bathathu babelana ngo-1956Ibhaso leNobel kwiFiziksikwimpumelelo yabo.[3]Olona hlobo lusetyenziswa kakhulu lwetransistor lumetal-oxide-semiconductor field-effect transistor(MOSFET), eyaqanjwa nguU-Mohamed AtallakwayeDawon KahngeBell Labs ngo-1959.[4][5][6]Iitransistors zaliguqula icandelo lezobuchwephesha, kwaye zavula indlela yencinci kunye nexabiso eliphantsioonomathotholo,izixhobo zokubala, kwayeiikhompyutha, phakathi kwezinye izinto.
Uninzi lwee-transistors zenziwe ngokucoceka kakhuluisilicon, kwaye abanye ukusukaigermaniumKodwa ngamanye amaxesha kusetyenziswa ezinye izixhobo ze-semiconductor.I-transistor inokuba nohlobo olunye kuphela lomthwali wentlawulo, kwi-transistor enesiphumo sangaphandle, okanye inokuba neentlobo ezimbini zabathwali bentlawuloi-bipolar junction transistorizixhobo.Xa kuthelekiswa neityhubhu yokufunxa, ii-transistors zincinci kwaye zifuna amandla amancinci ukuze zisebenze.Iityhubhu ezithile zokufunxa zineengenelo ngaphezu kweetransistors kumaza okusebenza aphezulu kakhulu okanye umbane osebenza kakhulu.Iindidi ezininzi zee-transistors zenziwa kwimilinganiselo esemgangathweni ngabavelisi abaninzi.












